FQB10N20CTM
RoHS

FQB10N20CTM

FQB10N20CTM

onsemi

MOSFET N-CH 200V 9.5A D2PAK

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FQB10N20CTM

In Stock: 10632
Pricing
QTY UNIT PRICE EXT PRICE
1 0.3481
10 0.3411
100 0.3307
1000 0.3203
10000 0.3063
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesQFET®
Rds On (Max) @ Id, Vgs360 mOhm @ 4.75A, 10V
Power Dissipation (Max)72W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 9.5A (Tc) 72W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)