NTMS4816NR2G
RoHS

NTMS4816NR2G

NTMS4816NR2G

onsemi

MOSFET N-CH 30V 6.8A 8SOIC

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NTMS4816NR2G

In Stock: 20142
Pricing
QTY UNIT PRICE EXT PRICE
1 0.581
10 0.5694
100 0.5519
1000 0.5345
10000 0.5113
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SOIC
Series-
Rds On (Max) @ Id, Vgs10 mOhm @ 9A, 10V
Power Dissipation (Max)780mW (Ta)
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesNTMS4816NR2G-ND NTMS4816NR2GOSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time11 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 25V
Gate Charge (Qg) (Max) @ Vgs18.3nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C6.8A (Ta)