SI3421DV-T1-GE3
RoHS

SI3421DV-T1-GE3

SI3421DV-T1-GE3

Vishay

MOSFET P-CH 30V 8A TSOP-6

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SI3421DV-T1-GE3

In Stock: 19876
Pricing
QTY UNIT PRICE EXT PRICE
1 0.555
10 0.5439
100 0.5272
1000 0.5106
10000 0.4884
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
RoHSCompliant
MountSurface Mount
Height1.1 mm
Weight19.986414 mg
Fall Time13 ns
PackagingTape & Reel (TR)
Rise Time9 ns
REACH SVHCUnknown
Rds On Max19.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance2.58 nF
Power Dissipation2 W
Threshold Voltage-3 V
Number of Channels1
Turn-On Delay Time7 ns
Turn-Off Delay Time55 ns
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16 mΩ
Gate to Source Voltage (Vgs)-20 V
Continuous Drain Current (ID)-8.3 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V