SI3433BDV-T1-E3
RoHS

SI3433BDV-T1-E3

SI3433BDV-T1-E3

Vishay

MOSFET P-CH 20V 4.3A 6-TSOP

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SI3433BDV-T1-E3

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Specifications
RoHSCompliant
MountSurface Mount
Fall Time45 ns
Lead FreeLead Free
Rise Time45 ns
REACH SVHCUnknown
Rds On Max42 mΩ
Resistance42 mΩ
Nominal Vgs-450 mV
Case/PackageTSOP
Number of Pins6
Power Dissipation1.1 W
Threshold Voltage-450 mV
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time80 ns
Element ConfigurationSingle
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance42 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.3 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V