SI4403BDY-T1-E3
RoHS

SI4403BDY-T1-E3

SI4403BDY-T1-E3

Vishay

MOSFET P-CH 20V 7.3A 8-SOIC

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SI4403BDY-T1-E3

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Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Fall Time45 ns
Lead FreeLead Free
Rise Time45 ns
Rds On Max17 mΩ
Resistance17 mΩ
Case/PackageSOIC
Number of Pins8
Power Dissipation1.35 W
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time150 ns
Element ConfigurationSingle
Max Power Dissipation1.35 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance17 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)7.3 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V