SI4660DY-T1-E3
RoHS

SI4660DY-T1-E3

SI4660DY-T1-E3

Vishay

MOSFET N-CH 25V 23.1A 8-SOIC

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SI4660DY-T1-E3

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Specifications
RoHSCompliant
MountSurface Mount
Fall Time22 ns
Rise Time14 ns
Rds On Max5.8 mΩ
Case/PackageSOIC
Input Capacitance2.41 nF
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time95 ns
Element ConfigurationSingle
Max Power Dissipation5.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance5.8 mΩ
Gate to Source Voltage (Vgs)16 V
Continuous Drain Current (ID)17.2 A
Drain to Source Voltage (Vdss)25 V