SI4686DY-T1-GE3
RoHS

SI4686DY-T1-GE3

SI4686DY-T1-GE3

Vishay

MOSFET N-CH 30V 18.2A 8-SOIC

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SI4686DY-T1-GE3

In Stock: 23163
Pricing
QTY UNIT PRICE EXT PRICE
1 1.5
10 1.47
100 1.425
1000 1.38
10000 1.32
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time8 ns
Rise Time20 ns
Rds On Max9.5 mΩ
Nominal Vgs3 V
Case/PackageSO
Number of Pins8
Contact PlatingTin
Input Capacitance1.22 nF
Power Dissipation3 W
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)13.8 A
Drain to Source Voltage (Vdss)30 V