SI4850EY-T1-GE3
RoHS

SI4850EY-T1-GE3

SI4850EY-T1-GE3

Vishay

MOSFET N-CH 60V 6A 8-SOIC

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SI4850EY-T1-GE3

In Stock: 45708
Pricing
QTY UNIT PRICE EXT PRICE
1 1.768
10 1.7326
100 1.6796
1000 1.6266
10000 1.5558
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight506.605978 mg
Fall Time12 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max22 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs3 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation3.3 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance22 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)6 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V