SI8499DB-T2-E1
RoHS

SI8499DB-T2-E1

SI8499DB-T2-E1

Vishay

MOSFET P-CH 20V 16A MICROFOOT

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SI8499DB-T2-E1

In Stock: 23883
Pricing
QTY UNIT PRICE EXT PRICE
1 0.6534
10 0.6403
100 0.6207
1000 0.6011
10000 0.575
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
RoHSCompliant
MountSurface Mount
Fall Time30 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max32 mΩ
Resistance32 MΩ
Number of Pins6
Input Capacitance1.3 nF
Power Dissipation2.77 W
Threshold Voltage-500 mV
Number of Channels1
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time55 ns
Element ConfigurationSingle
Max Power Dissipation13 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance32 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)7.8 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V