SIA427DJ-T1-GE3
RoHS

SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

Vishay

MOSFET P-CH 8V 12A SC-70-6

Download Datasheet

SIA427DJ-T1-GE3

In Stock: 15675
Pricing
QTY UNIT PRICE EXT PRICE
1 0.55
10 0.539
100 0.5225
1000 0.506
10000 0.484
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Specifications
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time40 ns
Lead FreeLead Free
Rise Time20 ns
REACH SVHCUnknown
Rds On Max16 mΩ
Resistance13 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins6
Input Capacitance2.3 nF
Power Dissipation3.5 W
Threshold Voltage350 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time70 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance13 mΩ
Gate to Source Voltage (Vgs)5 V
Continuous Drain Current (ID)12 A
Drain to Source Voltage (Vdss)8 V
Drain to Source Breakdown Voltage-8 V