SIA447DJ-T1-GE3
RoHS

SIA447DJ-T1-GE3

SIA447DJ-T1-GE3

Vishay

MOSFET P-CH 12V 12A SC-70-6L

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SIA447DJ-T1-GE3

In Stock: 16414
Pricing
QTY UNIT PRICE EXT PRICE
1 0.4935
10 0.4836
100 0.4688
1000 0.454
10000 0.4343
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time50 ns
Rise Time60 ns
REACH SVHCUnknown
Rds On Max13.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins6
Input Capacitance2.88 nF
Power Dissipation3.5 W
Threshold Voltage-400 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time30 ns
Radiation HardeningNo
Turn-Off Delay Time60 ns
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance11 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-12 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-12 V
Drain to Source Breakdown Voltage-12 V