SIR836DP-T1-GE3
RoHS

SIR836DP-T1-GE3

SIR836DP-T1-GE3

Vishay

MOSFET N-CH 40V 21A PPAK SO-8

Download Datasheet

SIR836DP-T1-GE3

In Stock: 24771
Pricing
QTY UNIT PRICE EXT PRICE
1 0.664
10 0.6507
100 0.6308
1000 0.6109
10000 0.5843
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Specifications
RoHSCompliant
MountSurface Mount
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time19 ns
REACH SVHCUnknown
Rds On Max19 mΩ
Resistance22.5 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1.2 V
Number of Pins8
Contact PlatingTin
Input Capacitance600 pF
Power Dissipation3.9 W
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time17 ns
Max Power Dissipation15.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance19 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)21 A
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V