SIR882DP-T1-GE3
RoHS

SIR882DP-T1-GE3

SIR882DP-T1-GE3

Vishay

MOSFET N-CH 100V 60A PPAK SO-8

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SIR882DP-T1-GE3

In Stock: 19851
Pricing
QTY UNIT PRICE EXT PRICE
1 2.7956
10 2.7397
100 2.6558
1000 2.572
10000 2.4601
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
RoHSCompliant
MountSurface Mount
Weight506.605978 mg
Lead FreeLead Free
REACH SVHCUnknown
Rds On Max8.7 mΩ
Schedule B8541290080
Nominal Vgs1.2 V
Number of Pins8
Input Capacitance1.93 nF
Power Dissipation5.4 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Element ConfigurationSingle
Max Power Dissipation83 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)60 A
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V