2N3507
RoHS

2N3507

2N3507

Central Semiconductor

2N3507

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2N3507

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Specifications
PackageBulk
Series-
ProductStatusObsolete
TransistorTypePNP
Current-Collector(Ic)(Max)3 A
Voltage-CollectorEmitterBreakdown(Max)50 V
VceSaturation(Max)@Ib1.5V @ 250mA, 2.5A
Ic1µA
Current-CollectorCutoff(Max)35 @ 500mA, 1V
DCCurrentGain(hFE)(Min)@Ic1 W
Vce3MHz
Power-Max-65°C ~ 200°C (TJ)
Frequency-TransitionThrough Hole
OperatingTemperatureTO-205AD, TO-39-3 Metal Can
MountingTypeTO-39
Package/Case-
SupplierDevicePackage-
Grade
Qualification