In Stock:
19924
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 13.6826 | |
| 10 | 13.4089 | |
| 100 | 12.9985 | |
| 1000 | 12.588 | |
| 10000 | 12.0407 |
Specifications
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
|---|---|
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | TO-247-3 |
| Series | Z-FET™ |
| Rds On (Max) @ Id, Vgs | 196 mOhm @ 10A, 20V |
| Power Dissipation (Max) | 125W (Tc) |
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 52 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 527pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs | 32.6nC @ 20V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Detailed Description | N-Channel 1200V 19A (Tc) 125W (Tc) Through Hole TO-247-3 |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
