IXFN50N80Q2
RoHS

IXFN50N80Q2

IXFN50N80Q2

IXYS

MOSFET N-CH 800V 50A SOT-227B

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IXFN50N80Q2

In Stock: 10362
Pricing
QTY UNIT PRICE EXT PRICE
1 36.7339
10 35.9992
100 34.8972
1000 33.7952
10000 32.3258
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
PackageTube
SeriesHiPerFET™, Q2 Class
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)160mOhm @ 500mA, 10V
RdsOn(Max)@Id5.5V @ 8mA
Vgs260 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)13500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1135W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification