IXTA1R4N120P
RoHS

IXTA1R4N120P

IXTA1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO263

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IXTA1R4N120P

In Stock: 13479
Pricing
QTY UNIT PRICE EXT PRICE
1 4.8216
10 4.7252
100 4.5805
1000 4.4359
10000 4.243
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C1.4A (Tc)
DriveVoltage(MaxRdsOn13Ohm @ 500mA, 10V
MinRdsOn)4.5V @ 100µA
RdsOn(Max)@Id24.8 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id666 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds86W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-263AA
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification