IXTA3N120
RoHS

IXTA3N120

IXTA3N120

IXYS

MOSFET N-CH 1200V 3A TO263

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IXTA3N120

In Stock: 19443
Pricing
QTY UNIT PRICE EXT PRICE
1 7.308
10 7.1618
100 6.9426
1000 6.7234
10000 6.431
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.5Ohm @ 1.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs42 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1350 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature200W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification