In Stock:
19113
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Specifications
| Vgs(th) (Max) @ Id | 2V @ 250µA |
|---|---|
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | DIRECTFET™ MT |
| Series | HEXFET® |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 25A, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Other Names | IRF6607-ND IRF6607TR SP001532212 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 6930pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 4.5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 27A (Ta), 94A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MT |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 94A (Tc) |
