In Stock:
11667
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Specifications
| Package | Bulk |
|---|---|
| Series | - |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 25A (Tc) |
| DriveVoltage(MaxRdsOn | 20V |
| MinRdsOn) | 175mOhm @ 10A, 20V |
| RdsOn(Max)@Id | 2.5V @ 1mA |
| Vgs | 72 nC @ 20 V |
| Vgs(th)(Max)@Id | +25V, -10V |
| Vgs(Max) | - |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 175W (Tc) |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
| OperatingTemperature | - |
| MountingType | - |
| SupplierDevicePackage | Through Hole |
| Package/Case | TO-247 |
| GateCharge(Qg)(Max)@Vgs | TO-247-3 |
| Grade | |
| Qualification |
