CSD25213W10
RoHS

CSD25213W10

CSD25213W10

Texas Instruments

MOSFET P-CH 20V 1.6A 4DSBGA

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CSD25213W10

In Stock: 21935
Pricing
QTY UNIT PRICE EXT PRICE
1 0.531
10 0.5204
100 0.5044
1000 0.4885
10000 0.4673
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesNexFET™
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C1.6A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)47mOhm @ 1A, 4.5V
RdsOn(Max)@Id1.1V @ 250µA
Vgs2.9 nC @ 4.5 V
Vgs(th)(Max)@Id-6V
Vgs(Max)478 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType4-DSBGA (1x1)
SupplierDevicePackage4-UFBGA, DSBGA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification